ace 230 5 b p - channel enhancement mode field effect transistor ver 1. 2 1 d escription the ACE2305B uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. features ? v ds = - 2 0v , i d = - 4 a ? r ds(on) < 5 5 m @ v gs = - 4.5 v ? r ds(on) < 63 m @ v gs = - 2 .5 v ? r ds(on) < 83 m @ v gs = - 1.8 v ? esd protected: 3000v hbm absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 2 0 v gate - source voltage v gs 8 v drain current (continuous) t a =25 o c i d - 4 a t a = 70 o c - 3.2 drain current (pulse) i d m - 30 a power dissipation t a =25 o c p d 1.4 w operating and storage temperature range t j , t stg - 55 to 150 o c packaging type sot - 23 - 3 l d 3 1 2 g s ordering i nformation ace 230 5 b xx + h sot - 23 - 3 l description 1 gate 2 source 3 drain bm : sot - 23 - 3 l pb - free halogen - free
ace 230 5 b p - channel enhancement mode field effect transistor ver 1. 2 2 electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit on/ off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 2 0 v zero gate voltage drain current i dss v ds = - 1 6 v, v gs =0 v - 1 ua gate leakage c u r r e n t i gss v gs = + 8 v, v ds =0v 1 0 na gate threshold v o l t a g e i gs ( t h ) v gs = v ds , i ds = - 2 5 0 a - 0 . 3 - 0 . 6 5 - 1 na static drain - source on - resistance r ds(on) v gs = - 4.5v, i d = - 4 a 5 0 5 5 m v gs = - 2 .5v, i d = - 4 a 5 9 6 3 v gs = - 1 . 8 v, i d = - 2 a 7 4 8 3 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 1 - 1.6 - 2.0 v forward transconductance g fs v ds = - 5v, i d = - 4 a 8 1 6 s m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s - 2 . 2 a drain forward voltage v sd i s = - 1a,v gs =0v - 0.8 - 1 v switching characteristics (3) tota l gate charge q g v ds = - 10v, i d = - 4a v gs = - 4.5v 4.59 5.97 nc gate - source charge q gs 2.14 2.78 gate - drain charge q gd 2.51 3.26 turn - on delay time t d(on) v dd = - 10 v,r l = 2.5 i d = - 4 a, v gen = - 4.5v r g = 3 965.2 1930.4 ns turn - on rise time t f 1604 3 208 tu rn - off delay time t d(off) 7716 15432 turn - off fall time t f 3452 6904 dynamic characteristics (3) input capacitance c iss v ds = - 10 v, v gs =0v f=1.0mhz 36.45 pf output capacitance c oss 128.57 reverse transfer capacitance c rss 15.17 note: 1. pulse width limited by maximum junction temperature 2. pulse test: pw Q 300us, duty cycle Q 2% 3. for design aid only, not subject to production testing. 4. switching time is essentially independent of operating temperature.
ace 230 5 b p - channel enhancement mode field effect transistor ver 1. 2 3 typical performance characteristics
ace 230 5 b p - channel enhancement mode field effect transistor ver 1. 2 4 typical performance characteristics
ace 230 5 b p - channel enhancement mode field effect transistor ver 1. 2 5 packing information sot - 23 - 3 l unit: mm
ace 230 5 b p - channel enhancement mode field effect transistor ver 1. 2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approva l of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whos e failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
|
